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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Truth Tables
Read with auto precharge enabled : Starts with registration of a READ command
with auto precharge enabled and ends when t RP has been met. After t RP is met, the
bank will be in the idle state.
Write with auto precharge enabled : Starts with registration of a WRITE command
with auto precharge enabled and ends when t RP has been met. After t RP is met, the
bank will be in the idle state.
5. The following states must not be interrupted by any executable command; COMMAND
INHIBIT or NOP commands must be applied on each positive clock edge during these
states.
Refreshing : Starts with registration of an AUTO REFRESH command and ends when
t RFC is met. After t RFC is met, the device will be in the all banks idle state.
Accessing mode register : Starts with registration of a LOAD MODE REGISTER com-
mand and ends when t MRD has been met. After t MRD is met, the device will be in the
all banks idle state.
Precharging all : Starts with registration of a PRECHARGE ALL command and ends
when t RP is met. After t RP is met, all banks will be in the idle state.
6.
7.
8.
9.
10.
11.
All states and sequences not shown are illegal or reserved.
Not bank specific; requires that all banks are idle.
Does not affect the state of the bank and acts as a NOP to that bank.
READs or WRITEs listed in the Command/Action column include READs or WRITEs with
auto precharge enabled and READs or WRITEs with auto precharge disabled.
May or may not be bank specific; if all banks need to be precharged, each must be in a
valid state for precharging.
This command is BURST TERMINATE when CKE is HIGH and DEEP POWER-DOWN when
CKE is LOW.
PDF: 09005aef8459c827
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN
34
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2011 Micron Technology, Inc. All rights reserved.
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